2sa2126 no.7990-1/9 applications ? dc / dc converter, relay drivers, lamp drivers, motor drivers features ? adoption of mbit processes ? high current capacitance ? low collector-to-emitter saturation voltage ? high-speed switching speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo --50 v collector-to-emitter voltage v ces --50 v collector-to-emitter voltage v ceo --50 v emitter-to-base voltage v ebo -- 6 v collector current i c -- 3 a collector current (pulse) i cp -- 6 a base current i b --600 ma continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : en7990a 60612 tkim tc-00002496/21505ea tsim tb-00000214 sanyo semiconductors data sheet 2sa2126 pnp epitaxial planar silicon transistor dc / dc converter applications http:// semicon.sanyo.com/en/network product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a 2sa2126-e 2sa2126-h 2SA2126-TL-E 2sa2126-tl-h a2126 lot no. 2,4 3 1 tl
2sa2126 no.7990-2/9 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 0.8 w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = --40v, i e =0a --1 a emitter cutoff current i ebo v eb = --4v, i c =0a --1 a dc current gain h fe v ce = --2v, i c = --100ma 200 560 gain-bandwidth product f t v ce = --10v, i c = --500ma 390 mhz output capacitance cob v cb = --10v, f=1mhz 24 pf collector-to-emitter saturation voltage v ce (sat)1 i c = --1a, i b = --50ma --135 --270 mv v ce (sat)2 i c = --2a, i b = --100ma --260 --520 mv base-to-emitter saturation voltage v be (sat) i c = --2a, i b = --100ma --0.96 --1.2 v collector-to-base breakdown voltage v (br)cbo i c = --10 a, i e =0a --50 v collector-to-emitter breakdown voltage v (br)ces i c = --100 a, r be = 0 --50 v collector-to-emitter breakdown voltage v (br)ceo i c = --1ma, r be = --50 v emitter-to-base breakdown voltage v (br)ebo i e = --10 a, i c =0a --6 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg 230 ns fall time t f 18 ns switching time test circuit ordering information device package shipping memo 2sa2126-e tp 500pcs./bag pb free 2sa2126-h tp 500pcs./bag pb free and halogen free 2SA2126-TL-E tp-fa 700pcs./reel pb free 2sa2126-tl-h tp-fa 700pcs./reel pb free and halogen free v r r l v cc = --25v v be =5v + + 50 input outpu t r b 100 f 470 f pw=20 s i b1 i b2 d.c. 1% --10i b1 =10i b2 = i c = --1a
2sa2126 no.7990-3/9 i c -- v ce collector current, i c -- a collector-to-emitter voltage, v ce -- v it07642 0 --4.0 --4.5 --5.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.4 --0.8 --1.2 --2.0 --1.6 --1.8 --0.2 --0.6 --1.0 --1.4 i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v it07643 0 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 v ce = --2v ta=75 c 25 c --25 c i b =0 --250ma --200ma --150ma --100ma --50ma --20ma --10ma --5ma --0.1 --0.01 7 5 3 2 --1.0 --10 7 5 3 27 5 3 2 v be (sat) -- i c collector current, i c -- a it07647 --1.0 3 5 7 2 3 --1.0 --0.1 --0.01 v ce (sat) -- i c collector current, i c -- a it07648 2 --0.1 --0.01 3 27 5 327 7 5 325 3 3 5 7 2 2 --1.0 3 5 7 cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v it07649 --1.0 --0.1 357 2357 2357 2 --10 --100 2 3 10 100 5 7 --0.1 --0.01 7 5 3 2 --1.0 7 5 3 2 --10 7 5 3 2 v ce (sat) -- i c collector current, i c -- a it07646 --0.1 --1.0 --0.01 2 3 5 7 2 3 5 7 25 c it07644 f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a it07645 100 3 1000 2 3 5 7 5 7 23 57 23 57 --0.1 23 57 --1.0 --10 --0.01 v ce = --10v h fe -- i c dc current gain, h fe collector current, i c -- a 100 3 1000 2 3 5 7 5 7 23 57 23 57 23 57 --0.1 --0.01 --1.0 --10 ta= --25 c 75 c i c / i b =20 i c / i b =50 ta=75 c -- 2 5 c 25 c i c / i b =20 ta=75 c 25 c --25 c f=1mhz 25 c -- 2 5 c ta=75 c v ce = --2v collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v
2sa2126 no.7990-4/9 p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c 0.9 0.8 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0 160 140 120 100 80 60 40 20 0 it07651 a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v --0.1 23 57 --1.0 23 57 --10 23 57 --100 it07650 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.01 --10 3 2 5 7 no heat sink tc=25 c single pulse 500 s dc operation (ta=25 c ) dc operation (tc=25 c ) 1ms 100ms < 10 s 100 s 10ms i c = --3a i cp = --6a p c -- tc collector dissipation, p c -- w case temperature, tc -- c it07652 16 14 15 11 13 12 9 10 6 7 8 5 3 4 2 1 0 160 140 120 100 80 60 40 20 0
2sa2126 no.7990-5/9 taping speci cation 2SA2126-TL-E, 2sa2126-tl-h
2sa2126 no.7990-6/9 outline drawing land pattern example 2SA2126-TL-E, 2sa2126-tl-h mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sa2126 no.7990-7/9 bag packing speci cation 2sa2126-e, 2sa2126-h
2sa2126 no.7990-8/9 outline drawing 2sa2126-e, 2sa2126-h mass (g) unit 0.315 * for reference mm
2sa2126 ps no.7990-9/9 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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